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Silicon carbide devices3/14/2023 The research activity carried out at IMM Catania headquarters is aimed to address the current limiting issues for SiC devices performances and study new process solutions. Nowadays, while a variety of 4H-SiC devices (e.g., Schottky diodes and MOSFETs) are already commercially available, there are still several physical/technological issues hindering the full exploitation of the material. In particular, 4H-SiC devices can find application in renewable energy conversion systems, hybrid/electric vehicles, high-power industrial and motor drives, power supplies for consumer electronics, etc. Owing to its superior electrical properties, such as a wide band gap (3.2 eV) and a high critical electric field (3MV/cm), Silicon Carbide (4H-SiC) is now considered the material of choice for the next generation of power electronics devices.
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